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The double-gate MOS has been introduced in MICROWIND for the simulation of non-volatile memories such as EPROM, EEPROM and FLASH. The command "UV exposure" erases floating gates and removes all electrons. The programming is performed by a very high voltage supply on the gate (7V in 0.12µm), a 1.2V voltage difference between drain and source. Some electrons are sufficiently accelerated to pass through the gate oxide by hot tunneling effect.
 

 
Highlights
 
    Simulation of non-volatile memories such as EPROM, EEPROM and FLASH using double-gate MOS
    Erasure of floating gates and removal all electrons.
    Programming can be performed by a very high voltage supply on the gate